Solid-state imaging device and electronic equipment

ABSTRACT

The present disclosure relates to a solid-state imaging device and electronic equipment that enable improvement of image quality of a captured image. In the solid-state imaging device, two or more photoelectric conversion layers including a photoelectric converter and a charge detector are laminated. The solid-state imaging device is configured to include a state in which light having entered one pixel of a first photoelectric conversion layer closer to an optical lens is received by the photoelectric converter of a plurality of pixels of the second photoelectric conversion layer farther from the optical lens. The technology of the present disclosure can be applied to, for example, a solid-state imaging device that performs imaging.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/732,003, filed 31 Dec. 2019, which is a continuation of U.S. patentapplication Ser. No. 15/325,768, filed 12 Jan. 2017, now U.S. Pat. No.11,728,357, which is a national stage application under 35 U.S.C. 371and claims the benefit of PCT Application No. PCT/JP2015/069827 havingan international filing date of 10 Jul. 2015, which designated theUnited States, which PCT application claimed the benefit of JapanesePatent Application No. 2014-148837 filed 22 Jul. 2014, the disclosuresof which are incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging device andelectronic equipment, and especially relates to a solid-state imagingdevice and electronic equipment that enable improvement of image qualityof a captured image.

BACKGROUND ART

As a photoelectric conversion device, there is an imaging device usingan organic photoelectric conversion film (for example, see PatentDocument 1). The organic photoelectric conversion film can perform colorseparation and light receiving at the same time with a thin film, andthus has a high aperture ratio and basically does not require an on-chipmicrolens.

There is also a photoelectric conversion device provided with aphotodiode on a silicon layer under an organic photoelectric conversionfilm, and which detects a phase difference with the photodiode on thesilicon layer while acquiring an image with the organic photoelectricconversion film (for example, see Patent Document 2).

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent No. 5244287-   Patent Document 2: Japanese Patent Application Laid-Open No.    2011-103335

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, in the structure disclosed in Patent Document 2, if a focusingpoint of the on-chip lens is set to the photodiode on the silicon layer,a radius of curvature of the on-chip lens becomes small, and obliqueincident characteristics are deteriorated. Therefore, a light-receivingamount becomes smaller as an image height (distance from an opticalcenter) becomes larger, and sensitivity nonuniformity called shadingoccurs.

The present disclosure has been made in view of the foregoing, andenables improvement of image quality of a captured image.

Solutions to Problems

In a solid-state imaging device according to a first aspect of thepresent disclosure, two or more layers of photoelectric conversionlayers, each of the photoelectric conversion layers including aphotoelectric converter and a charge detector, are laminated, and thesolid-state imaging device includes a state in which light havingentered one pixel of a first photoelectric conversion layer closer to anoptical lens is received in the photoelectric converter of a pluralityof pixels of a second photoelectric conversion layer farther from theoptical lens.

Electronic equipment according to a second aspect of the presentdisclosure includes: a solid-state imaging device in which two or morelayers of photoelectric conversion layers, each of the photoelectricconversion layers including a photoelectric converter and a chargedetector, are laminated, and a state in which light having entered onepixel of a first photoelectric conversion layer closer to an opticallens is received in the photoelectric converter of a plurality of pixelsof a second photoelectric conversion layer farther from the optical lensis included.

In the first and second aspects of the present disclosure, two or morelayers of photoelectric conversion layers, each of the photoelectricconversion layers including a photoelectric converter and a chargedetector, are laminated, and the solid-state imaging device includes astate in which light having entered one pixel of a first photoelectricconversion layer closer to an optical lens is received in thephotoelectric converter of a plurality of pixels of a secondphotoelectric conversion layer farther from the optical lens.

The solid-state imaging device and the electronic equipment may beindependent devices or may be modules incorporated in another device.

Effects of the Invention

According to the first and second aspects of the present disclosure, theimage quality of a captured image can be improved.

Note that the effect described here is not necessarily limited, and maybe any of effects described in the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating an imaging mechanism including asolid-state imaging device according to the present disclosure.

FIG. 2 is a diagram illustrating a schematic configuration of anupper-side substrate and a lower-side substrate.

FIG. 3 is a diagram illustrating a schematic configuration of anupper-side substrate and a lower-side substrate.

FIG. 4 is a sectional configuration diagram of a solid-state imagingdevice according to a first embodiment.

FIG. 5 is a sectional configuration diagram illustrating a modificationof the first embodiment.

FIG. 6 is a sectional configuration diagram of a solid-state imagingdevice according to a second embodiment.

FIG. 7 is a sectional configuration diagram of a solid-state imagingdevice according to a third embodiment.

FIGS. 8A and 8B are diagrams illustrating circuit arrangementconfiguration examples of a solid-state imaging device having atwo-layer laminate structure.

FIG. 9 is a diagram illustrating a circuit arrangement configurationexample of a solid-state imaging device having a three-layer laminatestructure.

FIG. 10 is a sectional configuration diagram of a solid-state imagingdevice having a three-layer laminate structure.

FIG. 11 is another sectional configuration diagram of the solid-stateimaging device having a three-layer laminate structure.

FIG. 12 is a diagram for describing focus control of a contrast method.

FIG. 13 is a sectional configuration diagram of a solid-state imagingdevice according to a fourth embodiment.

FIG. 14 is a sectional configuration diagram illustrating a modificationof the fourth embodiment.

FIG. 15 is a block diagram illustrating a configuration example of animaging apparatus as electronic equipment according to the presentdisclosure.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments for implementing the present disclosure(hereinafter, referred to as embodiments) will be described. Note thatdescription will be given in the order below.

1. First Embodiment (a configuration example in which an upper-sidesubstrate is a front surface irradiation-type substrate)2. Second Embodiment (a configuration example in which an upper-sidesubstrate is a back surface irradiation-type substrate)3. Third Embodiment (a configuration example in which photoelectricconversion films are two layers)4. Fourth Embodiment (a configuration example configured with athree-substrate laminate structure)5. Fifth Embodiment (a configuration example in which contrast AF isemployed)

6. Application Examples to Electronic Equipment 1. First Embodiment ofSolid-State Imaging Device <Configuration of Imaging Mechanism>

FIG. 1 is a diagram illustrating an imaging mechanism including asolid-state imaging device according to the present disclosure.

A solid-state imaging device 1 according to the present disclosurereceives light of an object 3 collected by an optical lens 2, asillustrated in FIG. 1 .

The solid-state imaging device 1 is a complex-type solid-state imagingdevice in which two semiconductor substrates 11A and 11B are laminated,for example. A photoelectric conversion layer including a photoelectricconverter and a charge detector that detects a charge photoelectricallyconverted by the photoelectric converter is formed on each of thesemiconductor substrates 11A and 11B. A semiconductor of thesemiconductor substrates 11A and 11B is, for example, silicon (Si). Anaperture 12 is formed between the two semiconductor substrates 11A and11B.

Note that, hereinafter, the semiconductor substrate 11A closer to theoptical lens 2, of the two semiconductor substrates 11A and 11B, iscalled upper-side substrate 11A, and the semiconductor substrate 11Bfarther from the optical lens 2 is called lower-side substrate 11B.Further, in a case where the two semiconductor substrates 11A and 11Bare not especially distinguished from each other, the semiconductorsubstrate 11A or 11B is simply called substrate 11.

FIG. 2 is a diagram illustrating a schematic configuration of theupper-side substrate 11A and the lower-side substrate 11B of thesolid-state imaging device 1.

A plurality of pixels 21A is arrayed on the upper-side substrate 11A ina two-dimensional array manner. An on-chip lens 22 is formed in each ofthe pixels 21A. Pixel signals obtained in the plurality of pixels 21Aarrayed on the upper-side substrate 11A are used as signals for imagegeneration. Therefore, the upper-side substrate 11A functions as animage sensor.

A plurality of pixels 21B is arrayed on the lower-side substrate 11B ina two-dimensional array manner. Pixel signals obtained in the pluralityof pixels 21B arrayed on the lower-side substrate 11B are used assignals for phase difference detection. Therefore, the lower-sidesubstrate 11B functions as a phase difference detection sensor.

As illustrated in FIG. 2 , opening portions 31 having one pixel sizethat is the same size as the pixel 21A of the upper-side substrate 11Aare formed in the aperture 12 at predetermined intervals. Accordingly,there are pixels that transmit incident light to the lower-sidesubstrate 11B and pixels that do not transmit the incident light to thelower-side substrate 11B, among the pixels 21A of the upper-sidesubstrate 11A.

For example, as illustrated in FIG. 2 , the incident light having passedthrough one pixel (hereinafter, referred to as transmission pixel) ofthe upper-side substrate 11A, the one pixel corresponding to the openingportion 31 of the aperture 12, is configured to enter 2×2 four pixels ofthe lower-side substrate 11B.

Since the pixels 21B of the lower-side substrate 11B are the pixels forphase difference detection, the incident light having passed through thetransmission pixel of the upper-side substrate 11A may just beconfigured to be received by a plurality of pixels, and may beconfigured to enter 4×4 sixteen pixels, for example, as illustrated inFIG. 3 .

In the phase difference detection, for example, in a case where thelight having passed through one transmission pixel enters the 2×2 fourpixels of the lower-side substrate 11B, a focal position can be detectedby comparing signals between an upper left pixel and a lower rightpixel, and comparing signals between an upper right pixel and a lowerleft pixel, of the 2×2 four pixels.

Note that FIGS. 2 and 3 are diagrams for describing relationship betweenthe transmission pixel of the upper-side substrate 11A, and lightreceiving pixels of the lower-side substrate 11B, which receive theincident light from the transmission pixel, and scales of pixel sizes ofthe upper-side substrate 11A and the lower-side substrate 11B aredifferent.

In an image phase difference sensor in which phase difference pixels arearranged in a part of an image sensor having a single layer structurethat is not a laminate structure, a condensing point of an on-chip lensis ideally a surface of a photodiode of a silicon layer. However, inreality, the condensing point is a deep position of the silicon layer.Therefore, a condensing point for imaging and a condensing point forphase difference detection are different, and there is a problem thatobtaining an ideal condensing point and optimization of a microlenscannot be achieved at the same time.

Further, if a focusing point of the on-chip lens is set to the surfaceof the photodiode of the silicon layer, a radius of curvature of theon-chip lens becomes small, and oblique incident characteristics aredeteriorated. Therefore, a light-receiving amount becomes smaller as animage height (distance from an optical center) becomes larger, andshading occurs.

Therefore, in the solid-state imaging device 1 according to the firstembodiment, the two substrates 11 are laminated, and the pixels forphase difference detection are arranged on the lower-side substrate 11B,so that the radius of curvature of the on-chip lens can be made large,and occurrence of the shading can be suppressed.

Further, the incident light having passed through the one pixel of theupper-side substrate 11A is received by a plurality of pixels largerthan 2×2 pixels. Therefore, multi-viewpoint separation becomesavailable, and separation performance of the phase difference pixels isimproved and performance of phase difference auto focus is improved.

FIG. 4 is a sectional configuration diagram of the solid-state imagingdevice 1 in the a-a′ line of FIG. 3 .

As illustrated in FIG. 4 , the solid-state imaging device 1 isconfigured such that the front surface irradiation-type upper-sidesubstrate 11A and the back surface irradiation-type lower-side substrate11B are laminated.

The upper-side substrate 11A is configured from a silicon layer 51, andlight enters from above of the silicon layer 51.

Above the silicon layer 51, an on-chip lens 22 formed for each of thepixels 21A, a blue photoelectric conversion film 52B thatphotoelectrically converts light with a blue (B) wavelength, a greenphotoelectric conversion film 52G that photoelectrically converts lightwith a green (G) wavelength, and a red photoelectric conversion film 52Rthat photoelectrically converts light with a red (R) wavelength arelaminated.

Transparent electrodes 53B, 53G, and 53R are respectively formed onlower surfaces of the blue photoelectric conversion film 52B, the greenphotoelectric conversion film 52G, and the red photoelectric conversionfilm 52R, for each of the pixels 21A. Further, the transparentelectrodes 53B, 53G, and 53R are respectively connected with transistorcircuits 55B, 55G, and 55R formed on the silicon layer 51 throughconnection electrodes 54B, 54G, and 54R. A top surface of the siliconlayer 51 is protected by an insulating film 56.

Note that, in FIG. 4 , only the transparent electrode 53B, theconnection electrode 54B, and the transistor circuit 55B regarding B, ofthe transparent electrodes 53B, 53G, and 53R, the connection electrodes54B, 54G, and 54R, and the transistor circuits 55B, 55G, and 55R, areillustrated with the reference signs, for prevention of complication ofthe drawing.

Transparent electrodes to which predetermined voltages such as a powersupply voltage and a GND may be formed on respective top surfaces of theblue photoelectric conversion film 52B, the green photoelectricconversion film 52G, and the red photoelectric conversion film 52R.

The photoelectric conversion film 52 (52B, 52G, or 52R) functions as aphotoelectric converter, and the transistor circuit 55 (55B, 55G, or55R) functions as a charge detector that detects a chargephotoelectrically converted in the photoelectric converter. Thephotoelectric conversion film 52 is formed over the entire surface of alight-receiving region. However, the transparent electrode 53 isseparately formed for each of the pixels. Therefore, R, G, and B pixelsignals can be acquired in units of a pixel.

The photoelectric conversion film 52 can be configured from, forexample, an organic photoelectric conversion film.

As the blue photoelectric conversion film 52B that photoelectricallyconverts the light with a B wavelength, an organic photoelectricconversion material containing coumarin dye,tris(8-hydroxyquinolinate)Al (Alq3), merocyanine dye, or the like can beused. As the green photoelectric conversion film 52G thatphotoelectrically converts the light with a G wavelength, an organicphotoelectric conversion material containing rhodamine dye, merocyaninedye, quinacridone, or the like can be used, for example. As the redphotoelectric conversion film 52R that photoelectrically converts thelight with an R wavelength, an organic photoelectric conversion materialcontaining phthalocyanine dye can be used.

Further, the photoelectric conversion film 52 may be configured from aninorganic photoelectric conversion film. The inorganic photoelectricconversion film can be formed of, for example, a CuInSe2 (CIS-based thinfilm) that is a semiconductor thin film having a chalcopyrite structure,or a Cu(In, Ga)Se2 (CIGS-based thin film) that is obtained by dissolvingGa to the CuInSe2.

A metal film 61 as the aperture 12 is formed below the silicon layer 51,and the opening portions 31 are formed in portions of the transmissionpixels, of the metal film 61. The metal film 61 is covered with aprotection film 62.

Further, a transparent layer 57 that fully transmits the incident lightis formed in a region of the silicon layer 51, the region correspondingto the opening portion 31. The transparent layer 57 can be formed ofSiO2 that is oxidized silicon (Si), for example. When the silicon layer51 of the transmission pixel is the transparent layer 57 that does notabsorb the light, the light with all wavelengths, which has passedthrough the three layer-photoelectric conversion film 52, can be broughtto reach the lower-side substrate 11B.

Note that, in the present embodiment, the photoelectric conversion film52 as the photoelectric converter is formed above the silicon layer 51,and no photodiode is formed on the silicon layer 51. Therefore, thethickness of the silicon layer 51 can be formed to be extremely thin.Therefore, the light can be sufficiently transmitted through the siliconlayer 51 as it is, without forming the transparent layer 57. Therefore,the silicon layer 51 as it is may be used.

The lower-side substrate 11B is configured from a silicon layer 70, anda photodiode (PD) 71 as a photoelectric converter is formed on thesilicon layer 70 for each of the pixels by pn junction.

As illustrated by the solid line arrows in FIG. 4 , a protection film 72and an intermediate layer 73 are formed according to a focal distance ofthe on-chip lens 22 such that the light having entered the transmissionpixel of the upper-side substrate 11A can enter the photodiodes 71 offour pixels of the lower-side substrate 11B. The protection film 72 canbe formed of, for example, a silicon oxide film or a silicon nitridefilm, and the intermediate layer 73 can be formed of, for example, aglass layer. Further, the intermediate layer 73 may be formed of thesame material as the protection film 72.

Since the lower-side substrate 11B is a back surface irradiation-typesubstrate, the lower-side substrate 11B and the upper-side substrate 11Aare bonded such that a side opposite to the multilayer wiring layer 84side formed on the silicon layer 70 faces the upper-side substrate 11Aside.

The multilayer wiring layer 84 includes a plurality of transistorcircuits 81 that configures a reading circuit that reads the signalcharges accumulated in the photodiodes 71, one or more layers of wiringlayers 82 and an interlayer insulating film 83, and the like.

In the solid-state imaging device 1 having the above-describedconfiguration, in the upper-side substrate 11A, R, G, and B pixelsignals are output in each of the pixels 21A, and the upper-sidesubstrate 11A functions as a color image sensor. Further, in thelower-side substrate 11B, phase difference signals obtained by receivingthe light having passed through the upper-side substrate 11A by theplurality of pixels 21B (multi viewpoints) are output, and thelower-side substrate 11B functions as a phase difference sensor.

In a case where the photoelectric conversion film 52 is used as thephotoelectric converter in the upper-side substrate 11A, colorseparation and light receiving can be performed with the thin film atthe same time. Therefore, an aperture ratio is high, and the on-chiplens 22 is basically unnecessary. Therefore, the on-chip lens 22 can beformed to have a long focal distance in accordance with light incidentto the plurality of photodiodes 71 of the lower-side substrate 11B.Therefore, acquisition of an image signal and the phase differencesignal can be realized without deteriorating the oblique incidentcharacteristics.

That is, according to the first embodiment of the solid-state imagingdevice 1, deterioration of the oblique incident characteristics can besuppressed, and occurrence of shading can be decreased. Therefore, imagequality of a captured image can be improved.

In the solid-state imaging device 1, which region of which pixels of thelower-side substrate 11 b the incident light having passed through thetransmission pixel of the upper-side substrate 11A enters can bearbitrarily adjusted by making an interval between the transmissionpixels of the upper-side substrate 11A large (thinning), by adjustingthe thickness of the intermediate layer 73, or the like. For example, byrealizing multi-viewpoints so that the light from one transmission pixelenters 4×4 sixteen pixels, instead of 2×2 four pixels, resolution in adistance direction (phase difference resolution) can be increased, andranging performance can be improved.

In the upper-side substrate 11A, the photoelectric conversion isperformed with the photoelectric conversion film 52 formed outside thesilicon layer 51. Therefore, it is not necessary to form a photodiode onthe silicon layer 51, and it is sufficient to form the transistorcircuit 55 only. Therefore, the thickness of the silicon layer 51 can bemade extremely thin. Accordingly, transmittance of the light with agreen (G) wavelength of the silicon layer 51 can be substantiallyincreased. Therefore, an incident light amount to the photodiodes 71 ofthe lower-side substrate 11B can be made large.

Further, in a case where a transmission pixel region of the siliconlayer 51 of the upper-side substrate 11A is the transparent layer 57that fully transmits the light, the incident light amount to thephotodiodes 71 of the lower-side substrate 11B can be made larger.

Note that, in a case where absorptivity of the photoelectric conversionfilm 52 is high, and the incident light amounts of the R light, the Glight, and the B light to the lower-side substrate 11B are small, nearinfrared light other than visible light may just be used for the phasedifference detection.

Modification of First Embodiment

FIG. 5 is a sectional configuration diagram of a modification of thesolid-state imaging device 1 according to the first embodiment.

Note that, in FIG. 5 and subsequent drawings, a portion corresponding tothe embodiment described by then is denoted with the same referencesign, and description of the portion is appropriately omitted.

As described above, in a case of using a photoelectric conversion film52 as a photoelectric converter of an upper-side substrate 11A, anon-chip lens 22 is unnecessary for the photoelectric conversion film 52.Therefore, the on-chip lens 22 above the laminated photoelectricconversion film 52 can be omitted as long as the solid-state imagingdevice 1 has some sort of structure for condensing incident light to alower-side substrate 11B.

For example, as illustrated in FIG. 5 , a structure provided with anin-layer lens 91 below an aperture 12, in place of the on-chip lens 22,and to condense the incident light to the lower-side substrate 11B withthe in-layer lens 91 can be employed.

The in-layer lens 91 can be provided above the aperture 12, or can bearranged in an arbitrary layer other than above, instead of below theaperture 12. Further, the in-layer lens 91 may be formed only to atransmission pixel, and a region of a pixel where no opening portion 31is formed may be formed flat. Similarly, the position of the aperture 12is not limited to below a silicon layer 51, and may be above the siliconlayer 51.

2. Second Embodiment of Solid-State Imaging Device

FIG. 6 is a sectional configuration diagram illustrating a secondembodiment of a solid-state imaging device 1 according to the presentdisclosure.

In the sectional configuration of the first embodiment illustrated inFIG. 4 , a configuration example in which the upper-side substrate 11Aas a front surface irradiation-type substrate and the lower-sidesubstrate 11B as a back surface irradiation-type substrate are laminatedhas been described.

However, the upper-side substrate 11A may be the back surfaceirradiation-type substrate, and the lower-side substrate 11B may be thefront surface irradiation-type substrate. That is, as the upper-sidesubstrate 11A and the lower-side substrate 11B, whichever of the frontsurface irradiation-type configuration and the back surfaceirradiation-type configuration may be employed.

The second embodiment illustrated in FIG. 6 is a configuration examplein which both of an upper-side substrate 11A and a lower-side substrate11B are laminated as back surface irradiation-type substrates. In otherwords, in the second embodiment of FIG. 6 , the upper-side substrate 11Ais changed to the back surface irradiation-type substrate, compared withthe first embodiment of FIG. 4 .

Since the upper-side substrate 11A is the back surface irradiation-typesubstrate, a multilayer wiring layer 103 is formed on a side (below theupper-side substrate 11A in FIG. 6 ) opposite to a side where light ofthe upper-side substrate 11A enters. The multilayer wiring layer 103 isconfigured from one or more layers of wiring layers 101 and aninterlayer insulating film 102.

Further, in the case where the upper-side substrate 11A is the backsurface irradiation-type substrate, an aperture 12 can be formed in onewiring layer 101, of the multilayer wiring layer 103, as illustrated inFIG. 6 .

3. Third Embodiment of Solid-State Imaging Device

In the sectional configuration of the first embodiment illustrated inFIG. 4 , one layer of the photoelectric conversion film 52 has beenprovided for each of R, G, and B, and the photoelectric converter has aconfiguration in which three layers of the photoelectric conversionfilms 52 are laminated.

However, the photoelectric converter is not limited to the three layers,and can be two layers, one layer, or four or more layers of thephotoelectric conversion films 52.

FIG. 7 is a sectional configuration diagram illustrating a thirdembodiment of a solid-state imaging device 1 according to the presentdisclosure, and illustrates a configuration example in which aphotoelectric converter is two layers of photoelectric conversion films52.

Note that, in FIG. 7 , a part of reference signs is omitted due tolimitations of space.

In the third embodiment, the two layers of the photoelectric conversionfilms 52 are formed above a semiconductor substrate 11A on a lightincident surface side. As an upper photoelectric conversion film 52 ofthe two layers, a green photoelectric conversion film 52G thatphotoelectrically converts light with a green (G) wavelength is formedon the entire surface.

Meanwhile, as a lower photoelectric conversion film 52 of the twolayers, a red photoelectric conversion film 52R that photoelectricallyconverts light with a red (R) wavelength and a blue photoelectricconversion film 52B that photoelectrically converts light with a Blue(B) wavelength are separately formed for each of pixels. The redphotoelectric conversion film 52R and the blue photoelectric conversionfilm 52B are formed in a checkered manner such that colors (wavelengths)of the light to be photoelectrically converted become different betweenadjacent pixels in a vertical direction and in a horizontal direction,for example.

A charge photoelectrically converted by the green photoelectricconversion film 52G is taken out by a transistor circuit 55G formed on asilicon layer 51 through a transparent electrode 53G and a connectionelectrode 54G formed in units of a pixel.

Similarly, a charge photoelectrically converted by the bluephotoelectric conversion film 52B is taken out by a transistor circuit55B formed on the silicon layer 51 through a transparent electrode 53Band a connection electrode 54B formed in units of a pixel. The sameapplies to the red photoelectric conversion film 52R.

In the third embodiment, as for a transmission pixel, that is, a pixel21A for which an opening portion 31 is formed in an aperture 12, thelower photoelectric conversion film 52, of the two layers of thephotoelectric conversion films 52, is the blue photoelectric conversionfilm 52B that photoelectrically converts the light with a B wavelength.In this case, the light with an R wavelength, which is the light notabsorbed in the upper layer-green photoelectric conversion film 52G andthe lower layer-blue photoelectric conversion film 52B in thetransmission pixel, enters the lower-side substrate 11B.

Therefore, in the third embodiment, phase difference detection can beperformed on the basis of a light-receiving amount of the light with anR wavelength.

As described above, in a case where the red photoelectric conversionfilm 52R and the blue photoelectric conversion film 52B are arranged ina checkered manner on the lower layer-photoelectric conversion film 52,the pixel 21A that does not absorb the light with an R wavelength(hereinafter, referred to as R non-absorbing pixel) is arranged in everyother pixel, and all of the R non-absorbing pixels can be thetransmission pixels.

For example, assume a case in which there are the pixel 21A that is thetransmission pixel because the opening portion 31 is arranged and thepixel 21A shaded by the aperture 12 because the opening portion 31 isnot arranged, of the plurality of R non-absorbing pixels arranged in alight-receiving region.

In this case, in the pixel 21A shaded by the aperture 12, the lighthaving passed through the two layers of the photoelectric conversionfilms 52 is reflected toward the side of the photoelectric conversionfilms 52 again by the aperture 12. However, in the pixel 21A for whichthe opening portion 31 is arranged, the light having passed through thetwo layers of the photoelectric conversion films 52 passes toward thelower-side substrate 11B. As a result, a sensitivity characteristic maydiffer between the transmission pixel and the pixel that is not thetransmission pixel, among the same R non-absorbing pixels and itsperipheral pixels.

Therefore, in the third embodiment, to prevent occurrence of acharacteristic difference due to existence/non-existence of the openingportion 31, all of the R non-absorbing pixels are the transmissionpixels. To be specific, all of the pixels of the two layers of thephotoelectric conversion films 52 that are formed of a combination ofthe green photoelectric conversion films 52G and the blue photoelectricconversion films 52B. In the lower layer-photoelectric conversion film52, the blue photoelectric conversion film 52B is arranged at intervalsof one pixel. Therefore, all of the R non-absorbing pixels can be thetransmission pixels. Accordingly, in the third embodiment, the problemthat the sensitivity characteristic differs between the same pixelswhere the color (wavelength) of the incident light to bephotoelectrically converted is the same does not occur.

However, to put it the other way around, in the third embodiment,arrangement of the transmission pixels is limited to the pixels 21A inthe combination of the green photoelectric conversion films 52G and theblue photoelectric conversion films 52B.

In contrast, in a case of a configuration in which three layers of thephotoelectric conversion films 52 corresponding to R, G, and B arelaminated, like the first and second embodiments, the wavelength oflight to be photoelectrically converted is common among all of thepixels. Therefore, which of the pixels can be the transmission pixel,and arrangement (pitch) of the transmission pixels in thelight-receiving region can be arbitrarily set.

Note that, in the above-described example, the pixel 21A in which theblue photoelectric conversion film 52B is formed, of the lower layers ofthe red photoelectric conversion film 52R and the blue photoelectricconversion film 52B arranged in a checkered manner, has been thetransmission pixel. However, the pixel 21A in which the redphotoelectric conversion film 52R is formed may be the transmissionpixel. In this case, the light with a B wavelength enters the lower-sidesubstrate 11B, and the phase difference detection is performed on thebasis of a light-receiving amount of the B light.

Further, the upper photoelectric conversion film 52, of the two layersof the photoelectric conversion films 52, may be the blue photoelectricconversion film 52B that photoelectrically converts the light with a Bwavelength, or the red photoelectric conversion film 52R thatphotoelectrically converts the light with an R wavelength. Thewavelength of the light to be photoelectrically converted in the lowerphotoelectric conversion film 52 can also appropriately changed inaccordance with the wavelength of the light to be photoelectricallyconverted in the upper photoelectric conversion film 52. That is, whichlight with a wavelength being photoelectrically converted in whichlayer, in the two layers of the photoelectric conversion films 52, canbe appropriately determined.

The arrangement of the lower two-color photoelectric conversion film 52in the checkered manner in the third embodiment can also beappropriately determined.

Circuit Arrangement Configuration Examples in Two Layer-Structure

FIGS. 8A and 8B illustrate circuit arrangement configuration examples ofthe respective substrates 11 of the upper-side substrate 11A and thelower-side substrate 11B.

A of FIG. 8 illustrates a circuit arrangement configuration example inwhich a cover rate of the phase difference sensor region of thelower-side substrate 11B to a light-receiving region 151 of theupper-side substrate 11A is 100%, where the light-receiving region 151of the upper-side substrate 11A and a light-receiving region 161 of thelower-side substrate 11B have the same size. In this case, a circuitregion 152 of the upper-side substrate 11A and a circuit region 162 ofthe lower-side substrate 11B have the same size. For example, in a casewhere the solid-state imaging device 1 has an APS-C size, thelight-receiving region 151 has a size of about 15.75 mm×23.6 mm.

B of FIG. 8 illustrates a circuit arrangement configuration example ofthe substrates 11 of the upper-side substrate 11A and the lower-sidesubstrate 11B of a case where one chip size is reduced as much aspossible without decreasing light-receiving sensitivity of the imagesensor.

Only the light-receiving region 151 is formed on the upper-sidesubstrate 11A.

Meanwhile, on the lower-side substrate 11B, a light-receiving region 171as a phase difference sensor region, and a circuit region 172 areformed. In the circuit region 172, the circuits of the circuit region152 of the upper-side substrate 11A and the circuit region 162 of thelower-side substrate 11B in A of FIG. 8 are collectively arranged.Therefore, the size of the circuit region 172 is larger than the size ofthe circuit region 162 of the lower-side substrate 11B in A of FIG. 8 .However, as the cover rate of the phase difference sensor region of thelower-side substrate 11B to the light-receiving region 151 of theupper-side substrate 11A, at least 80% can be secured.

Circuit Arrangement Configuration Example in Three Layer-Structure

Further, the solid-state imaging device 1 can also be configured with alaminate structure of three or more substrates 11, in addition to by theabove-described laminate structure with the two substrates 11.

FIG. 9 illustrates a circuit arrangement configuration example of thesubstrates 11 in a case where the solid-state imaging device 1 isconfigured with a laminate structure of three substrates 11.

Only a light-receiving region 151 is formed on an upper-side substrate11C serving as an uppermost layer of the three layer-structure, and alight-receiving region 161 is formed on an intermediate substrate 11Dserving as an intermediate layer, the light-receiving region 161 havingthe same size as the light-receiving region 151, and having a cover rateof a phase difference sensor region to the light-receiving region 151 ofthe upper-side substrate 11C of 100%.

A circuit region 181 is formed on a lower-side substrate 11E serving asa lowermost layer of the three layer-structure.

By causing the solid-state imaging device 1 to have the three-layerstructure, as described above, the chip size can be reduced comparedwith the solid-state imaging device 1 having the two-layer laminatestructure of A of FIG. 8 , yet the same APS-C size. Further, a largercover rate of the phase difference sensor region can be secured thanthat of the solid-state imaging device 1 by the two-layer laminatestructure of B of FIG. 8 .

Further, the entire region of the lower-side substrate 11E serving asthe lowermost layer can be used as the circuit region 181. Therefore, ananalog-digital converter (ADC), a logic circuit, a memory, and the likecan be arranged on the circuit region 181 of the lower-side substrate11E, in addition to a drive circuit that drives pixels of thelight-receiving region 151 of the upper-side substrate 11C and thelight-receiving region 161 of the intermediate substrate 11E.

Further, in a case where a circuit is arranged on the lower-sidesubstrate 11E serving as the lowermost layer to process signalprocessing of an image sensor of the uppermost layer and signalprocessing of a phase different sensor of the intermediate layer inparallel, a detection speed of phase difference auto focus can beimproved.

4. Fourth Embodiment of Solid-State Imaging Device Configuration Example1 of Three Layer-Structure

FIG. 10 illustrates a sectional configuration diagram of a case where asolid-state imaging device 1 is configured with a laminate structure ofthree substrates 11, which is a fourth embodiment of the solid-stateimaging device 1.

An upper-side substrate 11C and an intermediate substrate 11D correspondto the upper-side substrate 11A and the lower-side substrate 11B of thesolid-state imaging device 1 including the three layers of thephotoelectric conversion films 52 illustrated in FIG. 6 , and thusdescription is omitted. The upper-side substrate 11C and theintermediate substrate 11D are bonded to become back surfaceirradiation-type substrates.

Then, a multilayer wiring layer 84 of the intermediate substrate 11D anda multilayer wiring layer 214 of the lower-side substrate 11E are bondedby Cu—Cu metal coupling, for example. The multilayer wiring layer 214 isconfigured from one or more wiring layers 212 and an interlayerinsulating film 213. In FIG. 10 , the broken line between the wiringlayer 82 and the wiring layer 212 illustrates a bonding surface betweenthe intermediate substrate 11D and the lower-side substrate 11E.

A signal processing circuit including a plurality of transistor circuits211 and the like is formed on a silicon layer 201 of the lower-sidesubstrate 11E.

Configuration Example 2 of Three Layer-Structure

FIG. 11 illustrates another sectional configuration diagram of a casewhere the solid-state imaging device 1 is configured with a laminatestructure of three substrates 11.

An upper-side substrate 11C and an intermediate substrate 11D correspondto the upper-side substrate 11A and the lower-side substrate 11B of thesolid-state imaging device 1 including the two layers of thephotoelectric conversion films 52 illustrated in FIG. 7 , and thusdescription is omitted. The upper-side substrate 11C and theintermediate substrate 11D are bonded to become back surfaceirradiation-type substrates.

Then, a multilayer wiring layer 84 of the intermediate substrate 11D anda multilayer wiring layer 214 of the lower-side substrate 11E are bondedby Cu—Cu metal coupling, for example. The multilayer wiring layer 214 isconfigured from one or more wiring layers 212 and an interlayerinsulating film 213. In FIG. 11 , the broken line between the wiringlayer 82 and the wiring layer 212 illustrates a bonding surface betweenthe intermediate substrate 11D and the lower-side substrate 11E.

A signal processing circuit including a plurality of transistor circuits211 and the like is formed on a silicon layer 201 of the lower-sidesubstrate 11E.

5. Fifth Embodiment of Solid-State Imaging Device

The first to third embodiments described above have referred to theconfiguration in which the pixel signal obtained in the upper-sidesubstrate 11A is used as the signal to obtain a captured image, and thepixel signal obtained in the lower-side substrate 11B is used as thesignal to perform the phase difference detection.

Hereinafter, a configuration in which a contrast method of performingfocus control on the basis of a contrast difference between pixelsignals detected in two substrates 11 is employed, instead of phasedifference detection, as focus control, will be described.

<Focus Control of Contrast Method>

FIG. 12 is a diagram for describing focus control of a contrast methodperformed by the solid-state imaging device 1.

In a state of Far Object illustrated in the left side of FIG. 12 , thatis, in a state where an object 3 is farther than a focal position 4,contrast of an image obtained in an upper-side substrate 11A becomesstronger than contrast of an image obtained in a lower-side substrate11B.

In contrast, in a state of Near Object illustrated in the right side ofFIG. 12 , that is, in a state where the object 3 is closer than thefocal position 4, the contrast of the image obtained in the lower-sidesubstrate 11B becomes stronger than the contrast of the image obtainedin the upper-side substrate 11A.

Then, in a state of Just Focus illustrated in the center of FIG. 12 ,that is, in a state where the position of the focal position 4 and theposition of the object 3 are matched, the contrast of the image obtainedin the upper-side substrate 11A and the contrast of the image obtainedin the lower-side substrate 11B are matched.

As described above, a difference occurs between the contrast of theimage obtained in the upper-side substrate 11A and the contrast of theimage obtained in the lower-side substrate 11B according to the focalposition. Therefore, the focus control can be performed by comparing thecontrast of the image obtained in the upper-side substrate 11A and thecontrast of the image obtained in the lower-side substrate 11B.

Further, an auto focus adjusting direction can be obtained by detectingwhich of the contrast of the image obtained in the upper-side substrate11A and the contrast of the image obtained in the lower-side substrate11B is stronger. Therefore, auto focus can be performed at a high speed.

Further, the distance to the object 3 can be estimated from thedifference between the contrast of the image obtained in the upper-sidesubstrate 11A and the contrast of the image obtained in the lower-sidesubstrate 11B, and the focus position can be adjusted by one timeimaging.

FIG. 13 is a sectional configuration diagram illustrating a fifthembodiment of a solid-state imaging device 1 according to the presentdisclosure, and illustrates a configuration example of a case ofperforming focus control by the contrast method.

In FIG. 13 , a portion corresponding to the first embodiment illustratedin FIG. 4 is denoted with the same reference sign, and only portionsdifferent from the first embodiment will be described.

Comparing the configuration according to the fifth embodimentillustrated in FIG. 13 with the configuration according to the firstembodiment illustrated in FIG. 4 , the fifth embodiment is differentfrom the first embodiment in that an on-chip lens 22 and an aperture 12(metal film 61) are not formed.

As described above, in a case where a photoelectric converter of theupper-side substrate 11A is configured from a photoelectric conversionfilm 52, the on-chip lens 22 is not necessary. Further, the fifthembodiment may just be configured such that incident light forms animage on a top surface of a photodiodes 71 of the lower-side substrate11B with an optical lens 2 (FIG. 1 ), and the on-chip lens 22 isunnecessary even in light receiving of the lower-side substrate 11B.

Further, in a case of performing phase difference detection, a pluralityof pixels of the lower-side substrate 11B corresponds to onetransmission pixel. Therefore, pixels 21A other than the transmissionpixel need to be shaded by apertures 12. However, in the case of thefocus control by the contrast method, shading is not necessary.Therefore, the apertures 12 are not necessary.

By employing the above configuration, the solid-state imaging device 1can perform the focus control by comparing the contrast differencebetween the pixel signal obtained by the photoelectric conversion film52 of the upper-side substrate 11A and the pixel signal obtained by thephotodiodes 71 of the lower-side substrate 11B.

Note that, in the configuration illustrated in FIG. 13 , the threelayers of the photoelectric conversion films 52 are formed on the topsurface of the upper-side substrate 11A. Therefore, the light enteringthe photodiodes 71 of the lower-side substrate 11B is near infraredlight and the like other than visible light.

In contrast, as illustrated in FIG. 14 , for example, in a case wherethe number of layers of the photoelectric conversion films 52 formed onthe top surface of the upper-side substrate 11A is two, any one of Rlight, G light, and B light can be received by the photodiodes 71 of thelower-side substrate 11B. Then, the focus control can be performed bycomparing the image signal obtained in the photodiodes 71 of thelower-side substrate 11B and the pixel signal obtained in thephotoelectric conversion film 52 of the upper-side substrate 11A, whichphotoelectrically converts light of the same color as the light that canbe received in the lower-side substrate 11B. In the configurationexample of FIG. 14 , the focus control can be performed by comparing acontrast difference between the pixel signal obtained in the redphotoelectric conversion film 52R of the upper-side substrate 11A andthe pixel signal obtained in the photodiodes 71 of the lower-sidesubstrate 11B.

Further, in the fifth embodiment, a laminate structure with threesubstrates 11 can be employed, as described in FIGS. 9 to 11 .

6. Application Examples to Electronic Equipment

The above-described solid-state imaging device 1 can be applied tovarious types of electronic equipment including imaging apparatuses suchas a digital still camera and a digital video camera, a mobile phonedevice having an imaging function, and an audio player having an imagingfunction.

FIG. 15 is a block diagram illustrating a configuration example of theimaging apparatus as the electronic equipment according to the presentdisclosure.

An imaging apparatus 301 illustrated in FIG. 15 is configured from anoptical system 302, a shutter device 303, a solid-state imaging device304, a control circuit 305, a signal processing circuit 306, a monitor307, and a memory 308, and can image a still image and a moving image.

The optical system 302 includes one or a plurality of lenses, guideslight (incident light) from an object to the solid-state imaging device304, and forms an image on a light-receiving surface of the solid-stateimaging device 304.

The shutter device 303 is arranged between the optical system 302 andthe solid-state imaging device 304, and controls an irradiation periodand a shading period for the solid-state imaging device 304 according tocontrol of the control circuit 305.

The solid-state imaging device 304 is configured from theabove-described solid-state imaging device 1. The solid-state imagingdevice 304 accumulates signal charges for a fixed period according tolight imaged on a light-receiving surface through the optical system 302and the shutter device 303. The signal charges accumulated in thesolid-state imaging device 304 is transferred according to a drivesignal (timing signal) supplied from the control circuit 305. Thesolid-state imaging device 304 may be configured as a one chip alone, ormay be configured as a part of a camera module packaged with the opticalsystem 302, the signal processing circuit 306, or the like.

The control circuit 305 outputs the drive signals that control atransfer operation of the solid-state imaging device 304 and a shutteroperation of the shutter device 303 to drive the solid-state imagingdevice 304 and the shutter device 303.

The signal processing circuit 306 applies various types of signalprocessing to a pixel signal output from the solid-state imaging device304. An image (image data) obtained by applying the signal processing bythe signal processing circuit 306 is supplied to and displayed on themonitor 307, and is supplied to and stored (recorded) in the memory 308.

By using the solid-state imaging device 1 according to theabove-described embodiments as the solid-state imaging device 304, autofocus with high speed and high accuracy, which suppresses occurrence ofshading can be realized. Therefore, image quality of a captured imagecan be improved in the imaging apparatus 301 such as a video camera, adigital still camera, or a camera module for mobile equipment such as amobile telephone device.

Embodiments of the present disclosure are not limited to theabove-described embodiments, and various changes can be made withoutdeparting from the gist of the present disclosure.

As the substrate 11, either an impurity-region configuration in whichelectrons are the signal charges or an impurity-region configuration inwhich positive holes are the signal charges may be employed. Further, inthe above-described embodiments, the transistor circuits 55 and 81 asthe charge detectors have been formed on the substrate 11 (siliconsubstrate). However, the transistor circuits 55 and 81 may be organictransistors.

Embodiments of the present disclosure are not limited to theabove-described embodiments, and various changes can be made withoutdeparting from the gist of the present disclosure.

For example, a form of a combination of all or a part of the pluralityof embodiments may be employed.

Note that the effects described in the present specification are merelyexamples and are not limited. Effects other than those described in thepresent specification may be exhibited.

Note that the present disclosure may employ configurations below.

(1)

A solid-state imaging device in which two or more layers ofphotoelectric conversion layers, each of the photoelectric conversionlayers including a photoelectric converter and a charge detector, arelaminated,

-   -   the solid-state imaging device including a state in which light        having entered one pixel of a first photoelectric conversion        layer closer to an optical lens is received in the photoelectric        converter of a plurality of pixels of a second photoelectric        conversion layer farther from the optical lens.        (2)

The solid-state imaging device according to (1), wherein

-   -   the photoelectric converter of the first photoelectric        conversion layer is configured from a photoelectric conversion        film.        (3)

The solid-state imaging device according to (1) or (2), wherein

-   -   the photoelectric conversion film is an organic photoelectric        conversion film.        (4)

The solid-state imaging device according to (1) or (2), wherein

-   -   the photoelectric conversion film is an inorganic photoelectric        conversion film.        (5)

The solid-state imaging device according to any of (1) to (4), wherein

-   -   the photoelectric converter of the first photoelectric        conversion layer is configured from two or more layers of        photoelectric conversion films.        (6)

The solid-state imaging device according to any of (1) to (5), wherein

-   -   the photoelectric converter of the first photoelectric        conversion layer is configured from three layers of the        photoelectric conversion films.        (7)

The solid-state imaging device according to (6), wherein

-   -   the three layers of the photoelectric conversion films are a        first photoelectric conversion film that photoelectrically        converts light with a blue wavelength, a second photoelectric        conversion film that photoelectrically converts light with a        green wavelength, and a third photoelectric conversion film that        photoelectrically converts light with a red wavelength.        (8)

The solid-state imaging device according to any of (1) to (5), wherein

-   -   the photoelectric converter of the first photoelectric        conversion layer is configured from two layers of the        photoelectric conversion films.        (9)

The solid-state imaging device according to (8), wherein

-   -   a first layer of the two layers of the photoelectric conversion        films is the photoelectric conversion film that        photoelectrically converts light of any one of red color, green        color, and blue color, and    -   a second layer of the two layers of the photoelectric conversion        films is the photoelectric conversion film that        photoelectrically converts light of remaining two colors of the        red color, the green color, and the blue color.        (10)

The solid-state imaging device according to (9), wherein

-   -   the first layer of the first photoelectric conversion film        photoelectrically converts the light of the green color, and    -   the second layer of the second photoelectric conversion film        photoelectrically converts the light of the red color and the        blue color.        (11)

The solid-state imaging device according to any of (1) to (10), wherein

-   -   the charge detector is configured from a transistor circuit        formed on a silicon layer.        (12)

The solid-state imaging device according to any of (1) to (11), wherein

-   -   the photoelectric converter of the second photoelectric        conversion layer is configured from a photodiode.        (13)

The solid-state imaging device according to any of (1) to (12), wherein

-   -   a pixel signal obtained in the plurality of pixels of the second        photoelectric conversion layer is a signal for phase difference        detection.        (14)

The solid-state imaging device according to any of (1) to (12), wherein

-   -   a pixel signal obtained in the first photoelectric conversion        layer and a pixel signal obtained in the second photoelectric        conversion layer are compared, and focus control is performed.        (15)

The solid-state imaging device according to any of (1) to (14), wherein

-   -   pixels of the first photoelectric conversion layer include a        pixel that transmits the light to the second photoelectric        conversion layer, and a pixel that does not transmit the light        to the second photoelectric conversion layer.        (16)

The solid-state imaging device according to any of (1) to (15), wherein

-   -   the first photoelectric conversion layer and the second        photoelectric conversion layer are formed using two        semiconductor substrates.        (17)

The solid-state imaging device according to any of (1) to (16), wherein

-   -   the semiconductor substrate on which the charge detector of the        first photoelectric conversion layer is formed is a front        surface irradiation-type semiconductor substrate.        (18)

The solid-state imaging device according to any of (1) to (16), wherein

-   -   the semiconductor substrate on which the charge detector of the        first photoelectric conversion layer is formed is a back surface        irradiation-type semiconductor substrate.        (19)

The solid-state imaging device according to any of (1) to (18), wherein

-   -   a semiconductor substrate on which a signal processing circuit        is formed is laminated, in addition to the two semiconductor        substrates on which the first photoelectric conversion layer and        the second photoelectric conversion layer are formed.        (20)

Electronic equipment including:

-   -   a solid-state imaging device in which    -   two or more layers of photoelectric conversion layers, each of        the photoelectric conversion layers including a photoelectric        converter and a charge detector, are laminated, and    -   a state in which light having entered one pixel of a first        photoelectric conversion layer closer to an optical lens is        received in the photoelectric converter of a plurality of pixels        of a second photoelectric conversion layer farther from the        optical lens is included.

REFERENCE SIGNS LIST

-   -   1 Solid-state imaging device    -   2 Optical lens    -   11A and 11B Semiconductor substrate    -   12 Aperture    -   11D and 11E Semiconductor substrate    -   21A and 21B Pixel    -   22 On-chip lens    -   31 Opening portion    -   51 Silicon layer    -   52 Photoelectric conversion film    -   53 Transparent electrode    -   54 Connection electrode    -   55 Transistor circuit    -   70 Silicon layer    -   71 Photodiode    -   201 Silicon layer    -   211 Transistor circuit    -   301 Imaging apparatus    -   304 Solid-state imaging device

1. A solid-state imaging device in which two or more layers ofphotoelectric conversion layers, each of the photoelectric conversionlayers including a photoelectric converter and a charge detector, arelaminated, the solid-state imaging device including a state in whichlight having entered one pixel of a first photoelectric conversion layercloser to an optical lens is received in the photoelectric converter ofa plurality of pixels of a second photoelectric conversion layer fartherfrom the optical lens.
 2. The solid-state imaging device according toclaim 1, wherein the photoelectric converter of the first photoelectricconversion layer is configured from a photoelectric conversion film. 3.The solid-state imaging device according to claim 2, wherein thephotoelectric conversion film is an organic photoelectric conversionfilm.
 4. The solid-state imaging device according to claim 2, whereinthe photoelectric conversion film is an inorganic photoelectricconversion film.
 5. The solid-state imaging device according to claim 1,wherein the photoelectric converter of the first photoelectricconversion layer is configured from two or more layers of photoelectricconversion films.
 6. The solid-state imaging device according to claimwherein the photoelectric converter of the first photoelectricconversion layer is configured from three layers of the photoelectricconversion films.
 7. The solid-state imaging device according to claim6, wherein the three layers of the photoelectric conversion films are afirst photoelectric conversion film that photoelectrically convertslight with a blue wavelength, a second photoelectric conversion filmthat photoelectrically converts light with a green wavelength, and athird photoelectric conversion film that photoelectrically convertslight with a red wavelength.
 8. The solid-state imaging device accordingto claim 5, wherein the photoelectric converter of the firstphotoelectric conversion layer is configured from two layers of thephotoelectric conversion films.
 9. The solid-state imaging deviceaccording to claim 8, wherein a first layer of the two layers of thephotoelectric conversion films is the photoelectric conversion film thatphotoelectrically converts light of any one of red color, green color,and blue color, and a second layer of the two layers of thephotoelectric conversion films is the photoelectric conversion film thatphotoelectrically converts light of remaining two colors of the redcolor, the green color, and the blue color.
 10. The solid-state imagingdevice according to claim 9, wherein the first layer of the firstphotoelectric conversion film photoelectrically converts the light ofthe green color, and the second layer of the second photoelectricconversion film photoelectrically converts the light of the red colorand the blue color.
 11. The solid-state imaging device according toclaim 1, wherein the charge detector is configured from a transistorcircuit formed on a silicon layer.
 12. The solid-state imaging deviceaccording to claim 1, wherein the photoelectric converter of the secondphotoelectric conversion layer is configured from a photodiode.
 13. Thesolid-state imaging device according to claim 1, wherein a pixel signalobtained in the plurality of pixels of the second photoelectricconversion layer is a signal for phase difference detection.
 14. Thesolid-state imaging device according to claim 1, wherein a pixel signalobtained in the first photoelectric conversion layer and a pixel signalobtained in the second photoelectric conversion layer are compared, andfocus control is performed.
 15. The solid-state imaging device accordingto claim 1, wherein pixels of the first photoelectric conversion layerinclude a pixel that transmits the light to the second photoelectricconversion layer, and a pixel that does not transmit the light to thesecond photoelectric conversion layer.
 16. The solid-state imagingdevice according to claim 1, wherein the first photoelectric conversionlayer and the second photoelectric conversion layer are formed using twosemiconductor substrates.
 17. The solid-state imaging device accordingto claim 16, wherein the semiconductor substrate on which the chargedetector of the first photoelectric conversion layer is formed is afront surface irradiation-type semiconductor substrate.
 18. Thesolid-state imaging device according to claim 16, wherein thesemiconductor substrate on which the charge detector of the firstphotoelectric conversion layer is formed is a back surfaceirradiation-type semiconductor substrate.
 19. The solid-state imagingdevice according to claim 16, wherein a semiconductor substrate on whicha signal processing circuit is formed is laminated, in addition to thetwo semiconductor substrates on which the first photoelectric conversionlayer and the second photoelectric conversion layer are formed. 20.Electronic equipment comprising: a solid-state imaging device in whichtwo or more layers of photoelectric conversion layers, each of thephotoelectric conversion layers including a photoelectric converter anda charge detector, are laminated, and a state in which light havingentered one pixel of a first photoelectric conversion layer closer to anoptical lens is received in the photoelectric converter of a pluralityof pixels of a second photoelectric conversion layer farther from theoptical lens is included.